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APT5010JLL
500V 41A 0.100
POWER MOS 7
(R)
R
MOSFET
G
S D
S
Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching (R) losses are addressed with Power MOS 7 by significantly lowering RDS(ON) (R) and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. * Lower Input Capacitance * Lower Miller Capacitance * Lower Gate Charge, Qg
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25C Pulsed Drain Current
1
SO
2 T-
27
"UL Recognized"
ISOTOP (R)
* Increased Power Dissipation * Easier To Drive * Popular SOT-227 Package
D G S
All Ratings: TC = 25C unless otherwise specified.
APT5010JLL UNIT Volts Amps
500 41 164 30 40 378 3.03 -55 to 150 300 41 35
4
Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current
1
Volts Watts W/C C Amps mJ
(Repetitive and Non-Repetitive)
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
1600
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) Drain-Source On-State Resistance
2
MIN
TYP
MAX
UNIT Volts
500 0.100 100 500 100 3 5
(VGS = 10V, ID = 20.5A)
Ohms A nA Volts
9-2004 050-7018 Rev F
Zero Gate Voltage Drain Current (VDS = 500V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 400V, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
Symbol Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
3
APT5010JLL
Test Conditions
VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 250V ID = 41A @ 25C RESISTIVE SWITCHING VGS = 15V VDD = 250V ID = 41A @ 25C RG = 0.6 6 INDUCTIVE SWITCHING @ 25C VDD = 333V, VGS = 15V ID = 41A, RG = 5 6 INDUCTIVE SWITCHING @ 125C VDD = 330V, VGS = 15V ID = 41A, RG = 5
MIN
TYP
MAX
UNIT
4360 895 60 95 24 50 11 13 25 3 485 455 755 530
MIN TYP MAX UNIT Amps Volts ns C V/ns nC pF
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy
ns
J
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol IS ISM VSD t rr Q rr
dv/ dt
Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage
1 2
41 164 1.3 608 11.0 8
MIN TYP MAX
(Body Diode) (VGS = 0V, IS = -41A)
Reverse Recovery Time (IS = -41A, dl S /dt = 100A/s) Reverse Recovery Charge (IS = -41A, dl S/dt = 100A/s) Peak Diode Recovery
dv/ dt 5
THERMAL CHARACTERISTICS
Symbol RJC RJA Characteristic Junction to Case Junction to Ambient UNIT C/W
0.33 40
1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471
4 Starting Tj = +25C, L = 1.90mH, RG = 25, Peak IL = 41A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS -ID41A di/dt 700A/s VR VDSS TJ 150C 6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.35
, THERMAL IMPEDANCE (C/W)
0.30 0.25 0.20
0.9
0.7
0.5 0.15 0.10 0.05 0 0.3
Note:
PDM t1 t2 Peak TJ = PDM x ZJC + TC Duty Factor D = t1/t2
9-2004
050-7018 Rev F
Z
JC
0.1 0.05 10-5 10-4
SINGLE PULSE
10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1.0
Typical Performance Curves
120 100 80 60 40
APT5010JLL
15 &10V 8V 7.5V 7V
RC MODEL Junction temp. (C) 0.0988 Power (watts) 0.230 Case temperature. (C) 0.381F 0.0196F
ID, DRAIN CURRENT (AMPERES)
6.5V
6V 20 0 5.5V 0 5 10 15 20 25 30
90
ID, DRAIN CURRENT (AMPERES)
VDS> ID (ON) x RDS (ON)MAX. 250 SEC. PULSE TEST @ <0.5 % DUTY CYCLE
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL 100
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 1.2
V
GS
NORMALIZED TO = 10V @ I = 20.5A
D
80 70 60 50 40 30 20 10 0 0 1 2 TJ = +125C TJ = +25C 3 4 5 6
1.15 1.10 VGS=10V 1.05 VGS=20V 1.00 0.95 0.90
TJ = -55C
7
8
9
10
0
20
40
60
80
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS 45 40
ID, DRAIN CURRENT (AMPERES) BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED)
1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50
ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT
35 30 25 20 15 10 5 0 25 50 75 100 125 150
-25
0
25
50
75
100 125 150
TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE 2.5
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED)
I
D
= 20.5A
TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50
V
GS
= 10V
1.5
1.0
VGS(TH), THRESHOLD VOLTAGE (NORMALIZED)
2.0
0.5
0.0 -50
-25
0
25
50
75
100 125 150
-25
0
25
50
75
100 125 150
TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
050-7018 Rev F
9-2004
176 100
ID, DRAIN CURRENT (AMPERES)
OPERATION HERE LIMITED BY RDS (ON)
20,000 10,000 Ciss 100S
C, CAPACITANCE (pF)
APT5010JLL
1,000
Coss
10 1mS
100 Crss
1
TC =+25C TJ =+150C SINGLE PULSE 1 10 100 500 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA
D
10mS 10
0
10
20
30
40
50
16
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE 200
IDR, REVERSE DRAIN CURRENT (AMPERES)
I
= 41A
100
12 VDS=100V 8 VDS=250V VDS=400V
TJ =+150C TJ =+25C 10
4
0
0
20
40
60
80
100
120
140
1 0.3
0.5
0.7
0.9
1.1
1.3
1.5
Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE 80 70 60
td(on) and td(off) (ns)
V
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE 100
V
DD G
= 333V
td(off)
90 80
R
= 5
T = 125C
J
L = 100H
tr and tf (ns)
50 40 30 20 10
DD G
= 333V
70 60 50 40 30 td(on) 20 10 tf tr
R
= 5
T = 125C
J
L = 100H
0 10
40 50 60 70 ID (A) FIGURE 14, DELAY TIMES vs CURRENT
V
DD G
20
30
40 50 60 70 ID (A) FIGURE 15, RISE AND FALL TIMES vs CURRENT 2000
V I
DD
0 10
20
30
1500
= 333V
= 333V
R
= 5
D J
= 41A
L = 100H E ON includes diode reverse recovery.
SWITCHING ENERGY (J)
1200
Eon and Eoff (J)
T = 125C
J
T = 125C
1500
Eon
L = 100H E ON includes diode reverse recovery.
Eoff
900
1000
Eon
600
9-2004
300
500
050-7018 Rev F
Eoff 20 30 10 15 20 25 30 35 40 45 50 RG, GATE RESISTANCE (Ohms) FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE 0 0 5
40 50 60 70 ID (A) FIGURE 16, SWITCHING ENERGY vs CURRENT
0 10
APT5010JLL
Gate Voltage
10 % td(on) tr
Drain Current
90%
Gate Voltage
T = 125 C J
td(off)
Drain Voltage
T = 125 C J
90% 5% 10 %
Switching Energy
5%
Drain Voltage
90% tf 10%
Switching Energy Drain Current
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
APT30DF60
V DD
ID
V DS
G D.U.T.
Figure 20, Inductive Switching Test Circuit
SOT-227 (ISOTOP(R)) Package Outline
31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places)
r = 4.0 (.157) (2 places)
4.0 (.157) 4.2 (.165) (2 places)
25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504)
14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504)
* Source
Drain
* Source terminals are shorted internally. Current handling capability is equal for either Source terminal.
* Source Dimensions in Millimeters and (Inches)
ISOTOP(R) is a Registered Trademark of SGS Thomson.
Gate
APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
050-7018 Rev F
9-2004
3.3 (.129) 3.6 (.143)
1.95 (.077) 2.14 (.084)

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